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HSG1002VE-TL-E

In Stock: 519,687
HSG1002VE-TL-E - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - RF
REF: HSG1002VE-TL-E Renesas Electronics America Inc
HSG1002VE-TL-E

Renesas Electronics America Inc

RF 0.035A C BAND GERMANIUM NPN

HSG1002VE-TL-E is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. RF 0.035A C BAND GERMANIUM NPN. Key specifications: mounting type Surface Mount, package / case 4-SMD, Gull Wing, current - collector (ic) (max) 35mA, power - max 200mW.

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In Stock: 519,687

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)3.5V
Frequency - Transition38GHz
Noise Figure (dB Typ @ f)0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain8dB ~ 19.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 2V
Current - Collector (Ic) (Max)35mA
Operating Temperature-
Mounting TypeSurface Mount
Package / Case4-SMD, Gull Wing
Supplier Device Package4-MFPAK

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