Name: HAT2279HWS-E
Brand: Renesas Electronics America Inc
SKU: HAT2279HWS-E
Availability: InStock

REF: HAT2279HWS-E Renesas Electronics America Inc

HAT2279HWS-E

MOSFET N-CH 80V 30A 5LFPAK

HAT2279HWS-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 80V 30A 5LFPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SC-100, SOT-669.

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In Stock: 9,343

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3520 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	LFPAK
Package / Case	SC-100, SOT-669