HAT2173HWS-E - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: HAT2173HWS-E Renesas Electronics America Inc
HAT2173HWS-E

Renesas Electronics America Inc

MOSFET N-CH 100V 25A 5LFPAK

HAT2173HWS-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 100V 25A 5LFPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SC-100, SOT-669.

In Stock: 2,870

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4350 pF @ 10 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

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