HAT2170HWS-E - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: HAT2170HWS-E Renesas Electronics America Inc
HAT2170HWS-E

Renesas Electronics America Inc

MOSFET N-CH 40V 45A 5LFPAK

HAT2170HWS-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 40V 45A 5LFPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SC-100, SOT-669.

In Stock: 9,137

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4650 pF @ 10 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

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