Name: HAT2165N-EL-E
Brand: Renesas Electronics America Inc
SKU: HAT2165N-EL-E
Price: 1.91 USD
Availability: InStock

REF: HAT2165N-EL-E Renesas Electronics America Inc

HAT2165N-EL-E

Renesas Electronics America Inc

MOSFET N-CH 30V 55A 8LFPAK

HAT2165N-EL-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 30V 55A 8LFPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerSOIC (0.154", 3.90mm Width).

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In Stock: 2,365

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	3.6mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 4.5 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	5180 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-LFPAK-iV
Package / Case	8-PowerSOIC (0.154", 3.90mm Width)