HAT2165H-EL-E - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: HAT2165H-EL-E Renesas Electronics America Inc
HAT2165H-EL-E

Renesas Electronics America Inc

MOSFET N-CH 30V 55A LFPAK

HAT2165H-EL-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 30V 55A LFPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-100, SOT-669.

In Stock: 5,907

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs33 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5180 pF @ 10 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

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