HAT1069C-EL-E - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: HAT1069C-EL-E Renesas Electronics America Inc
HAT1069C-EL-E

Renesas Electronics America Inc

MOSFET P-CH 12V 4A 6CMFPAK

HAT1069C-EL-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET P-CH 12V 4A 6CMFPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 6-SMD, Flat Leads.

In Stock: 8,215

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs52mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 10 V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package6-CMFPAK
Package / Case6-SMD, Flat Leads

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