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H7N1004FN-E-A9#B0F

In Stock: 7,000
H7N1004FN-E-A9#B0F - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: H7N1004FN-E-A9#B0F Renesas Electronics America Inc
H7N1004FN-E-A9#B0F

Renesas Electronics America Inc

N-CHANNEL POWER MOSFET

H7N1004FN-E-A9#B0F is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. N-CHANNEL POWER MOSFET.

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In Stock: 7,000

Specifications

17 parameters
Product StatusActive
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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