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H5N2901FN-E

In Stock: 3,157
H5N2901FN-E - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: H5N2901FN-E Renesas Electronics America Inc
H5N2901FN-E

Renesas Electronics America Inc

N-CHANNEL POWER MOSFET

H5N2901FN-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. N-CHANNEL POWER MOSFET.

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In Stock: 3,157

Specifications

17 parameters
Product StatusActive
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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