Name: H5N2522LSTL-E
Brand: Renesas Electronics America Inc
SKU: H5N2522LSTL-E
Availability: InStock

REF: H5N2522LSTL-E Renesas Electronics America Inc

H5N2522LSTL-E

MOSFET N-CH 250V 20A 4LDPAK

H5N2522LSTL-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 250V 20A 4LDPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-83.

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In Stock: 3,921

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LDPAK
Package / Case	SC-83