2SK2729-E - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single
REF: 2SK2729-E Renesas Electronics America Inc
2SK2729-E

Renesas Electronics America Inc

MOSFET N-CH 500V 20A TO3P

2SK2729-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 500V 20A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C, package / case TO-3P-3, SC-65-3.

In Stock: 1,337

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 10 V
FET Feature-
Power Dissipation (Max)150W (Ta)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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