Name: 2SK1775-E
Brand: Renesas Electronics America Inc
SKU: 2SK1775-E
Availability: InStock

REF: 2SK1775-E Renesas Electronics America Inc

2SK1775-E

MOSFET N-CH 900V 8A TO3P

2SK1775-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 900V 8A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack.

Datasheet Request a Quote

In Stock: 3,325

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.6Ohm @ 4A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1730 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-220-3 Full Pack