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2SC3583-T1B-A

In Stock: 125,014
2SC3583-T1B-A - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - RF
REF: 2SC3583-T1B-A Renesas Electronics America Inc
2SC3583-T1B-A

Renesas Electronics America Inc

2SC3583 - MD

2SC3583-T1B-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas Electronics America Inc. 2SC3583 - MD. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 65mA.

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In Stock: 125,014

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.2dB @ 1GHz
Gain13dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 8V
Current - Collector (Ic) (Max)65mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT23-3 (TO-236)

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