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NP28N10SDE-E1-AY

In Stock: 2,500
NP28N10SDE-E1-AY - Renesas - Transistors - FETs, MOSFETs - Single
REF: NP28N10SDE-E1-AY Renesas
NP28N10SDE-E1-AY

Renesas

NP28N10SDE-E1-AY - MOS FIELD EFF

NP28N10SDE-E1-AY is a Transistors - FETs, MOSFETs - Single manufactured by Renesas. NP28N10SDE-E1-AY - MOS FIELD EFF. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 2,500

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs52mOhm @ 14A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.2W (Ta), 100W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (MP-3ZK)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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