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NESG270034-T1-AZ

In Stock: 5,000
NESG270034-T1-AZ - Renesas - Transistors - Bipolar (BJT) - RF
REF: NESG270034-T1-AZ Renesas
NESG270034-T1-AZ

Renesas

NPN SILICON MEDIUM POWER TRANSIS

NESG270034-T1-AZ is a Transistors - Bipolar (BJT) - RF manufactured by Renesas. NPN SILICON MEDIUM POWER TRANSIS. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-243AA, current - collector (ic) (max) 750mA.

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In Stock: 5,000

Specifications

13 parameters
Product StatusLast Time Buy
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)9.2V
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain19.5dB
Power - Max1.9W
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA, 3V
Current - Collector (Ic) (Max)750mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackageSOT-89

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