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NE856M02-T1-AZ

In Stock: 1,624
NE856M02-T1-AZ - Renesas - Transistors - Bipolar (BJT) - RF
REF: NE856M02-T1-AZ Renesas
NE856M02-T1-AZ

Renesas

SAME AS 2SC5336 NPN SILICON AMPL

NE856M02-T1-AZ is a Transistors - Bipolar (BJT) - RF manufactured by Renesas. SAME AS 2SC5336 NPN SILICON AMPL. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-243AA, current - collector (ic) (max) 100mA.

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In Stock: 1,624

Specifications

13 parameters
Product StatusLast Time Buy
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition6.5GHz
Noise Figure (dB Typ @ f)1.8dB @ 1GHz
Gain12dB
Power - Max1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackageSOT-89

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