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NE85639-T1-A

In Stock: 27,000
NE85639-T1-A - Renesas - Transistors - Bipolar (BJT) - RF
REF: NE85639-T1-A Renesas
NE85639-T1-A

Renesas

SAME AS 2SC4093 NPN SILICON AMPL

NE85639-T1-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas. SAME AS 2SC4093 NPN SILICON AMPL. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-253-4, TO-253AA, current - collector (ic) (max) 100mA.

Datasheet Request a Quote

In Stock: 27,000

Specifications

13 parameters
Product StatusLast Time Buy
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Gain13dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-253-4, TO-253AA
Supplier Device PackageSOT-143

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