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NE68819-T1-A

In Stock: 27,000
NE68819-T1-A - Renesas - Transistors - Bipolar (BJT) - RF
REF: NE68819-T1-A Renesas
NE68819-T1-A

Renesas

NPN SILICON AMPLIFIER AND OSCILL

NE68819-T1-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas. NPN SILICON AMPLIFIER AND OSCILL. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SC-75, SOT-416, current - collector (ic) (max) 100mA.

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In Stock: 27,000

Specifications

13 parameters
Product StatusLast Time Buy
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.7dB @ 2GHz
Gain8dB
Power - Max125mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 3mA, 1V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75 (USM)

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