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NE662M04-T2-A

In Stock: 135,000
NE662M04-T2-A - Renesas - Transistors - Bipolar (BJT) - RF
REF: NE662M04-T2-A Renesas
NE662M04-T2-A

Renesas

SAME AS 2SC5508 NPN SILICON AMPL

NE662M04-T2-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas. SAME AS 2SC5508 NPN SILICON AMPL. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-343F, current - collector (ic) (max) 35mA.

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In Stock: 135,000

Specifications

13 parameters
Product StatusLast Time Buy
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)3.3V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)1.1dB @ 2GHz
Gain17dB
Power - Max115mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 2V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device PackageM04

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