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NE58219-T1-A

In Stock: 36,000
NE58219-T1-A - Renesas - Transistors - Bipolar (BJT) - RF
REF: NE58219-T1-A Renesas
NE58219-T1-A

Renesas

NPN SILICON AMPLIFIER AND OSCILL

NE58219-T1-A is a Transistors - Bipolar (BJT) - RF manufactured by Renesas. NPN SILICON AMPLIFIER AND OSCILL. Key specifications: mounting type Surface Mount, operating temperature 125°C (TJ), package / case SC-75, SOT-416, current - collector (ic) (max) 60mA.

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In Stock: 36,000

Specifications

13 parameters
Product StatusLast Time Buy
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition5GHz
Noise Figure (dB Typ @ f)-
Gain5dB
Power - Max100mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 5V
Current - Collector (Ic) (Max)60mA
Operating Temperature125°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75 (USM)

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