2SK3447TZ-E - Renesas - Transistors - FETs, MOSFETs - Single
REF: 2SK3447TZ-E Renesas
2SK3447TZ-E

Renesas

2SK3447TZ-E - SILICON N CHANNEL

2SK3447TZ-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas. 2SK3447TZ-E - SILICON N CHANNEL. Key specifications: mounting type Through Hole, operating temperature 150°C, package / case TO-226-3, TO-92-3 Long Body.

In Stock: 10,000

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs1.95Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds85 pF @ 10 V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-92MOD
Package / CaseTO-226-3, TO-92-3 Long Body

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