2SJ529L06-E - Renesas - Transistors - FETs, MOSFETs - Single
REF: 2SJ529L06-E Renesas
2SJ529L06-E

Renesas

2SJ529L06 - P-CHANNEL POWER MOSF

2SJ529L06-E is a Transistors - FETs, MOSFETs - Single manufactured by Renesas. 2SJ529L06 - P-CHANNEL POWER MOSF. Key specifications: mounting type Through Hole, operating temperature 150°C, package / case TO-251-3 Long Leads, IPak, TO-251AB.

In Stock: 60,244

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 10 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageDPAK(L)-(2)
Package / CaseTO-251-3 Long Leads, IPak, TO-251AB

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