Name: RMD1N25ES9
Brand: Rectron USA
SKU: RMD1N25ES9
Price: 0.06 USD
Availability: InStock

REF: RMD1N25ES9 Rectron USA

RMD1N25ES9

MOSFET N-CHANNEL 25V 1.1A SOT363

RMD1N25ES9 is a Transistors - FETs, MOSFETs - Single manufactured by Rectron USA. MOSFET N-CHANNEL 25V 1.1A SOT363. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363.

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In Stock: 1,948

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-363
Package / Case	6-TSSOP, SC-88, SOT-363