Name: RM8N650HD
Brand: Rectron USA
SKU: RM8N650HD
Price: 0.52 USD
Availability: InStock

REF: RM8N650HD Rectron USA

RM8N650HD

MOSFET N-CHANNEL 650V 8A TO263-2

RM8N650HD is a Transistors - FETs, MOSFETs - Single manufactured by Rectron USA. MOSFET N-CHANNEL 650V 8A TO263-2. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Request a Quote

In Stock: 7,774

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	80W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB