RM5N650IP - Rectron USA - Transistors - FETs, MOSFETs - Single
REF: RM5N650IP Rectron USA
RM5N650IP

Rectron USA

MOSFET N-CHANNEL 650V 5A TO251

RM5N650IP is a Transistors - FETs, MOSFETs - Single manufactured by Rectron USA. MOSFET N-CHANNEL 650V 5A TO251. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

In Stock: 2,522

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 50 V
FET Feature-
Power Dissipation (Max)49W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Stub Leads, IPak

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