Name: RM4N650TI
Brand: Rectron USA
SKU: RM4N650TI
Price: 0.42 USD
Availability: InStock

REF: RM4N650TI Rectron USA

RM4N650TI

MOSFET N-CHANNEL 650V 4A TO220F

RM4N650TI is a Transistors - FETs, MOSFETs - Single manufactured by Rectron USA. MOSFET N-CHANNEL 650V 4A TO220F. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

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In Stock: 5,533

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	28.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack