Name: RM4N650LD
Brand: Rectron USA
SKU: RM4N650LD
Price: 0.33 USD
Availability: InStock

REF: RM4N650LD Rectron USA

RM4N650LD

MOSFET N-CHANNEL 650V 4A TO252-2

RM4N650LD is a Transistors - FETs, MOSFETs - Single manufactured by Rectron USA. MOSFET N-CHANNEL 650V 4A TO252-2. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

Request a Quote

In Stock: 8,985

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	46W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-2
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63