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RM35N30DN

In Stock: 8,922
RM35N30DN - Rectron USA - Transistors - FETs, MOSFETs - Single
REF: RM35N30DN Rectron USA
RM35N30DN

Rectron USA

MOSFET N-CHANNEL 30V 35A 8DFN

RM35N30DN is a Transistors - FETs, MOSFETs - Single manufactured by Rectron USA. MOSFET N-CHANNEL 30V 35A 8DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 8,922

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1265 pF @ 15 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN-EP (3x3)
Package / Case8-PowerVDFN

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