Name: RM12N650IP
Brand: Rectron USA
SKU: RM12N650IP
Price: 0.54 USD
Availability: InStock

REF: RM12N650IP Rectron USA

RM12N650IP

MOSFET N-CH 650V 11.5A TO251

RM12N650IP is a Transistors - FETs, MOSFETs - Single manufactured by Rectron USA. MOSFET N-CH 650V 11.5A TO251. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

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In Stock: 6,752

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	101W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Stub Leads, IPak