RM11N800T2 - Rectron USA - Transistors - FETs, MOSFETs - Single
REF: RM11N800T2 Rectron USA
RM11N800T2

Rectron USA

MOSFET N-CH 800V 11A TO220-3

RM11N800T2 is a Transistors - FETs, MOSFETs - Single manufactured by Rectron USA. MOSFET N-CH 800V 11A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 3,542

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 50 V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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