P3M06300T3 - PN Junction Semiconductor - Transistors - FETs, MOSFETs - Single
REF: P3M06300T3 PN Junction Semiconductor
P3M06300T3

PN Junction Semiconductor

SICFET N-CH 650V 9A TO-220-3

P3M06300T3 is a Transistors - FETs, MOSFETs - Single manufactured by PN Junction Semiconductor. SICFET N-CH 650V 9A TO-220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-2.

In Stock: 2,000

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C9A
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs500mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id2.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)35W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-2L
Package / CaseTO-220-2

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