Name: P3M06060G7
Brand: PN Junction Semiconductor
SKU: P3M06060G7
Price: 10.38 USD
Availability: InStock

REF: P3M06060G7 PN Junction Semiconductor

P3M06060G7

PN Junction Semiconductor

SICFET N-CH 650V 44A TO-263-7

P3M06060G7 is a Transistors - FETs, MOSFETs - Single manufactured by PN Junction Semiconductor. SICFET N-CH 650V 44A TO-263-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

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In Stock: 40

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	44A
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	79mOhm @ 20A, 15V
Vgs(th) (Max) @ Id	2.2V @ 20mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	159W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA