Name: P1H06300D8
Brand: PN Junction Semiconductor
SKU: P1H06300D8
Price: 4.98 USD
Availability: InStock

REF: P1H06300D8 PN Junction Semiconductor

P1H06300D8

PN Junction Semiconductor

GANFET N-CH 650V 10A DFN 8X8

P1H06300D8 is a Transistors - FETs, MOSFETs - Single manufactured by PN Junction Semiconductor. GANFET N-CH 650V 10A DFN 8X8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), supplier device package DFN8*8.

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In Stock: 9,536

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	10A
Drive Voltage (Max Rds On, Min Rds On)	6V
Rds On (Max) @ Id, Vgs	1.3V @ 1mA
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	55.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN8*8
Package / Case	-