PJW5N10-AU_R2_000A1

In Stock: 2,977
PJW5N10-AU_R2_000A1 - Panjit International Inc. - Transistors - FETs, MOSFETs - Single
REF: PJW5N10-AU_R2_000A1 Panjit International Inc.
PJW5N10-AU_R2_000A1

Panjit International Inc.

100V N-CHANNEL ENHANCEMENT MODE

PJW5N10-AU_R2_000A1 is a Transistors - FETs, MOSFETs - Single manufactured by Panjit International Inc.. 100V N-CHANNEL ENHANCEMENT MODE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

In Stock: 2,977

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta), 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs130mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds707 pF @ 30 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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