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PJW4N06A-AU_R2_000A1

In Stock: 9,119
PJW4N06A-AU_R2_000A1 - Panjit International Inc. - Transistors - FETs, MOSFETs - Single
REF: PJW4N06A-AU_R2_000A1 Panjit International Inc.
PJW4N06A-AU_R2_000A1

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

PJW4N06A-AU_R2_000A1 is a Transistors - FETs, MOSFETs - Single manufactured by Panjit International Inc.. 60V N-CHANNEL ENHANCEMENT MODE M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 9,119

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.1 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds509 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.7W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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