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PJW1NA60B_R2_00001

In Stock: 6,958
PJW1NA60B_R2_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Single
REF: PJW1NA60B_R2_00001 Panjit International Inc.
PJW1NA60B_R2_00001

Panjit International Inc.

600V N-CHANNEL MOSFET

PJW1NA60B_R2_00001 is a Transistors - FETs, MOSFETs - Single manufactured by Panjit International Inc.. 600V N-CHANNEL MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 6,958

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds210 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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