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PJQ4465AP_R2_00001

In Stock: 9,812
PJQ4465AP_R2_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Single
REF: PJQ4465AP_R2_00001 Panjit International Inc.
PJQ4465AP_R2_00001

Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

PJQ4465AP_R2_00001 is a Transistors - FETs, MOSFETs - Single manufactured by Panjit International Inc.. 60V P-CHANNEL ENHANCEMENT MODE M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 9,812

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C5A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs48mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1256 pF @ 30 V
FET Feature-
Power Dissipation (Max)2W (Ta), 20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN3333-8
Package / Case8-PowerVDFN

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