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PJQ1917_R1_00001

In Stock: 4,018
PJQ1917_R1_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Single
REF: PJQ1917_R1_00001 Panjit International Inc.
PJQ1917_R1_00001

Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

PJQ1917_R1_00001 is a Transistors - FETs, MOSFETs - Single manufactured by Panjit International Inc.. 20V P-CHANNEL ENHANCEMENT MODE M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-UFDFN.

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In Stock: 4,018

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.1 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds51 pF @ 10 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1006-3
Package / Case3-UFDFN

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