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PJP4NA65_T0_00001

In Stock: 7,892
PJP4NA65_T0_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Single
REF: PJP4NA65_T0_00001 Panjit International Inc.
PJP4NA65_T0_00001

Panjit International Inc.

650V N-CHANNEL MOSFET

PJP4NA65_T0_00001 is a Transistors - FETs, MOSFETs - Single manufactured by Panjit International Inc.. 650V N-CHANNEL MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 7,892

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.4 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds463 pF @ 25 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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