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PJP100P03_T0_00001

In Stock: 7,045
PJP100P03_T0_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Single
REF: PJP100P03_T0_00001 Panjit International Inc.
PJP100P03_T0_00001

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

PJP100P03_T0_00001 is a Transistors - FETs, MOSFETs - Single manufactured by Panjit International Inc.. 30V P-CHANNEL ENHANCEMENT MODE M. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 7,045

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C15.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6067 pF @ 25 V
FET Feature-
Power Dissipation (Max)2W (Ta), 119W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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