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PJF4NA65H_T0_00001

In Stock: 1,815
PJF4NA65H_T0_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Single
REF: PJF4NA65H_T0_00001 Panjit International Inc.
PJF4NA65H_T0_00001

Panjit International Inc.

650V N-CHANNEL MOSFET

PJF4NA65H_T0_00001 is a Transistors - FETs, MOSFETs - Single manufactured by Panjit International Inc.. 650V N-CHANNEL MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

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In Stock: 1,815

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.1 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds423 pF @ 25 V
FET Feature-
Power Dissipation (Max)23W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack

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