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PJD35P03_L2_00001

In Stock: 2,994
PJD35P03_L2_00001 - Panjit International Inc. - Transistors - FETs, MOSFETs - Single
REF: PJD35P03_L2_00001 Panjit International Inc.
PJD35P03_L2_00001

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

PJD35P03_L2_00001 is a Transistors - FETs, MOSFETs - Single manufactured by Panjit International Inc.. 30V P-CHANNEL ENHANCEMENT MODE M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 2,994

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C8.4A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1169 pF @ 15 V
FET Feature-
Power Dissipation (Max)2W (Ta), 35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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