Name: PSMN8R0-30YLC115
Brand: NXP USA Inc.
SKU: PSMN8R0-30YLC115
Availability: InStock

REF: PSMN8R0-30YLC115 NXP USA Inc.

PSMN8R0-30YLC115

N-CHANNEL POWER MOSFET

PSMN8R0-30YLC115 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case SC-100, SOT-669.

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In Stock: 2,482

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	848 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669