PSMN7R6-60XSQ - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PSMN7R6-60XSQ NXP USA Inc.
PSMN7R6-60XSQ

NXP USA Inc.

MOSFET N-CH 60V 51.5A TO220F

PSMN7R6-60XSQ is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 60V 51.5A TO220F. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

In Stock: 2,543

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C51.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs38.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2651 pF @ 30 V
FET Feature-
Power Dissipation (Max)46W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack, Isolated Tab

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