Name: PSMN3R3-80ES,127
Brand: NXP USA Inc.
SKU: PSMN3R3-80ES,127
Price: 1.35 USD
Availability: InStock

REF: PSMN3R3-80ES,127 NXP USA Inc.

PSMN3R3-80ES,127

NXP USA Inc.

ELEMENT, NCHANNEL, SILICON, MOSF

PSMN3R3-80ES,127 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. ELEMENT, NCHANNEL, SILICON, MOSF. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 1,415

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	139 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9961 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	338W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA