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PSMN009-100W,127

In Stock: 2,473
PSMN009-100W,127 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PSMN009-100W,127 NXP USA Inc.
PSMN009-100W,127

NXP USA Inc.

MOSFET N-CH 100V 100A TO247-3

PSMN009-100W,127 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 100V 100A TO247-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

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In Stock: 2,473

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs214 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9000 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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