PMT29EN,115 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PMT29EN,115 NXP USA Inc.
PMT29EN,115

NXP USA Inc.

MOSFET N-CH 30V 6A SOT223

PMT29EN,115 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 30V 6A SOT223. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

In Stock: 5,986

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs29mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds492 pF @ 15 V
FET Feature-
Power Dissipation (Max)820mW (Ta), 8.33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-73
Package / CaseTO-261-4, TO-261AA

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