Name: PMT200EN,135
Brand: NXP USA Inc.
SKU: PMT200EN,135
Price: 0.07 USD
Availability: InStock

REF: PMT200EN,135 NXP USA Inc.

PMT200EN,135

MOSFET N-CH 100V 1.8A SOT223

PMT200EN,135 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 100V 1.8A SOT223. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 16,000

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	235mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	475 pF @ 80 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 8.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-73
Package / Case	TO-261-4, TO-261AA