Name: PMPB40SNA115
Brand: NXP USA Inc.
SKU: PMPB40SNA115
Availability: InStock

REF: PMPB40SNA115 NXP USA Inc.

PMPB40SNA115

POWER FIELD-EFFECT TRANSISTOR

PMPB40SNA115 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad.

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In Stock: 8,958

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	43mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	612 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN2020MD-6
Package / Case	6-UDFN Exposed Pad