PMPB12UN,115 - NXP USA Inc. - Transistors - FETs, MOSFETs - Single
REF: PMPB12UN,115 NXP USA Inc.
PMPB12UN,115

NXP USA Inc.

MOSFET N-CH 20V 7.9A 6DFN

PMPB12UN,115 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 20V 7.9A 6DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad.

In Stock: 65,963

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs18mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds886 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.7W (Ta), 12.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-DFN2020MD (2x2)
Package / Case6-UDFN Exposed Pad

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